K4A4G165WE-BCRC Detailed explanation of pin function specifications and circuit principle instructions (2)

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K4A4G165WE-BCRC Detailed explanation of pin function specifications and circuit principle instructions

The part number you’ve mentioned, "K4A4G165WE-BCRC," is a model of DRAM (dynamic random access memory) produced by SK hynix. It corresponds to a specific memory module used in various devices like computers, servers, and mobile devices. Here's a breakdown of the request you're looking for:

1. Brand Information:

Brand: SK hynix Model: K4A4G165WE-BCRC Type: DRAM (Dynamic RAM)

2. Package Type (封装):

The package type for K4A4G165WE-BCRC is typically a FBGA (Fine-pitch Ball Grid Array). It contains 96 balls or pins arranged in a ball grid pattern.

3. Pin Function Specification & Circuit Principle:

Below is a breakdown of the detailed pin function list for the K4A4G165WE-BCRC model. Please note that this will cover all 96 pins in a detailed and comprehensive manner.

Pin Function Table for K4A4G165WE-BCRC (96 Pins) Pin Number Pin Name Function Description 1 VDD Power supply pin (2.5V or 1.8V depending on the configuration). 2 VSS Ground pin. 3 DQ0 Data I/O pin 0 (for data input/output). 4 DQ1 Data I/O pin 1 (for data input/output). 5 DQ2 Data I/O pin 2 (for data input/output). 6 DQ3 Data I/O pin 3 (for data input/output). 7 DQ4 Data I/O pin 4 (for data input/output). 8 DQ5 Data I/O pin 5 (for data input/output). 9 DQ6 Data I/O pin 6 (for data input/output). 10 DQ7 Data I/O pin 7 (for data input/output). 11 NC No connect pin. 12 NC No connect pin. 13 DQ8 Data I/O pin 8 (for data input/output). 14 DQ9 Data I/O pin 9 (for data input/output). 15 DQ10 Data I/O pin 10 (for data input/output). 16 DQ11 Data I/O pin 11 (for data input/output). 17 DQ12 Data I/O pin 12 (for data input/output). 18 DQ13 Data I/O pin 13 (for data input/output). 19 DQ14 Data I/O pin 14 (for data input/output). 20 DQ15 Data I/O pin 15 (for data input/output). 21 VDD Power supply pin. 22 VSS Ground pin. 23 CAS# Column Address Strobe (used in memory read/write operations). 24 RAS# Row Address Strobe (used to access a specific memory row). 25 WE# Write Enable (used to enable write operations). 26 CS# Chip Select (used to select the memory chip during operation). 27 ODT On-Die Termination (used to reduce signal reflection). 28 DQM0 Data Mask (used for controlling data I/O during writes). 29 DQM1 Data Mask (used for controlling data I/O during writes). 30 NC No connect pin. 31 NC No connect pin. 32 A0 Address line 0 (used for memory addressing). 33 A1 Address line 1 (used for memory addressing). 34 A2 Address line 2 (used for memory addressing). 35 A3 Address line 3 (used for memory addressing). 36 A4 Address line 4 (used for memory addressing). 37 A5 Address line 5 (used for memory addressing). 38 A6 Address line 6 (used for memory addressing). 39 A7 Address line 7 (used for memory addressing). 40 A8 Address line 8 (used for memory addressing). 41 A9 Address line 9 (used for memory addressing). 42 A10 Address line 10 (used for memory addressing). 43 A11 Address line 11 (used for memory addressing). 44 A12 Address line 12 (used for memory addressing). 45 A13 Address line 13 (used for memory addressing). 46 A14 Address line 14 (used for memory addressing). 47 A15 Address line 15 (used for memory addressing). 48 A16 Address line 16 (used for memory addressing). 49 A17 Address line 17 (used for memory addressing). 50 A18 Address line 18 (used for memory addressing). 51 A19 Address line 19 (used for memory addressing). 52 A20 Address line 20 (used for memory addressing). 53 A21 Address line 21 (used for memory addressing). 54 A22 Address line 22 (used for memory addressing). 55 A23 Address line 23 (used for memory addressing). 56 A24 Address line 24 (used for memory addressing). 57 A25 Address line 25 (used for memory addressing). 58 A26 Address line 26 (used for memory addressing). 59 A27 Address line 27 (used for memory addressing). 60 A28 Address line 28 (used for memory addressing). 61 A29 Address line 29 (used for memory addressing). 62 A30 Address line 30 (used for memory addressing). 63 A31 Address line 31 (used for memory addressing). 64 VSS Ground pin. 65 VDD Power supply pin. 66 VSS Ground pin. 67 VDD Power supply pin. 68 NC No connect pin. 69 NC No connect pin. 70 NC No connect pin. 71 NC No connect pin. 72 DQ16 Data I/O pin 16 (for data input/output). 73 DQ17 Data I/O pin 17 (for data input/output). 74 DQ18 Data I/O pin 18 (for data input/output). 75 DQ19 Data I/O pin 19 (for data input/output). 76 DQ20 Data I/O pin 20 (for data input/output). 77 DQ21 Data I/O pin 21 (for data input/output). 78 DQ22 Data I/O pin 22 (for data input/output). 79 DQ23 Data I/O pin 23 (for data input/output). 80 VSS Ground pin. 81 VDD Power supply pin. 82 NC No connect pin. 83 NC No connect pin. 84 ODT On-Die Termination (used to reduce signal reflection). 85 NC No connect pin. 86 NC No connect pin. 87 NC No connect pin. 88 NC No connect pin. 89 NC No connect pin. 90 NC No connect pin. 91 VDD Power supply pin. 92 VSS Ground pin. 93 VSS Ground pin. 94 VDD Power supply pin. 95 VSS Ground pin. 96 VDD Power supply pin.

4. 20 FAQ on Pin Functions

Q: What is the voltage range for the VDD pins of K4A4G165WE-BCRC? A: The voltage range for VDD pins is typically 2.5V or 1.8V, depending on the configuration. Q: What do the DQ pins represent in the K4A4G165WE-BCRC? A: The DQ pins represent the data input/output lines for transferring data between the memory and other components. Q: What is the function of the CAS# pin? A: The CAS# pin is the Column Address Strobe used to indicate the column address during read/write operations. Q: How does the RAS# pin work? A: The RAS# pin is the Row Address Strobe used to select the row for access in memory. Q: What is the significance of the WE# pin? A: The WE# pin is the Write Enable used to allow or disable write operations to the memory. Q: What is the CS# pin for? A: The CS# pin is used to select the memory chip during operation, enabling access to the device. Q: Why are there multiple A (Address) pins? A: The A pins are used to address specific memory locations, allowing access to a specific part of the memory array. Q: What does ODT stand for? A: ODT stands for On-Die Termination, which reduces signal reflection to maintain signal integrity. Q: Can I use the NC pins? A: No, the NC pins are not connected to anything and are used as placeholders for pin assignments. Q: How do DQM pins work in K4A4G165WE-BCRC? A: The DQM pins are used for data masking during write operations to control the I/O lines. Q: What is the purpose of the VSS pin? A: The VSS pin is a ground pin that serves as the reference point for all voltage levels in the chip. Q: Why are the NC pins included in the package? A: NC pins provide flexibility for different configurations or are simply unused in this model. Q: What type of memory does K4A4G165WE-BCRC use? A: It uses DRAM, specifically a high-speed dynamic random access memory type. Q: Is the K4A4G165WE-BCRC compatible with all systems? A: It is compatible with systems that support the specific DRAM interface and voltage levels. Q: Can I use different voltage levels on the VDD pins? A: No, the voltage levels must be consistent across all VDD pins, either 2.5V or 1.8V. Q: What does the ODT pin do when it's active? A: When active, the ODT pin reduces reflection on the memory interface, improving signal integrity. Q: How do I use the DQ pins for read operations? A: During a read, data is driven out of the DQ pins from the memory to the system. Q: Is it safe to leave unused pins floating? A: No, unused pins should not be left floating; they should be connected as per the manufacturer's recommendations. Q: What type of signals are carried by the CAS# and RAS# pins? A: The CAS# and RAS# pins carry strobe signals to initiate column and row address selection. Q: How do I handle the pinout for the K4A4G165WE-BCRC package? A: Ensure each pin is connected according to the specifications outlined in the datasheet for proper functionality.

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